fig6

From: Equivalent doping of Te leads to optimized electrical and thermal transport properties in thermoelectric Cu₂MnSnSe₄ alloys

Equivalent doping of Te leads to optimized electrical and thermal transport properties in thermoelectric Cu<sub>2</sub>MnSnSe<sub>4</sub> alloys

Figure 6. (A) Temperature dependence of the dimensionless figure of merit (zT) for all the samples. (B) Comparison of zT for S-5 and other Cu₂MnSnSe₄ systems^{[21,27-29,37,38]} at 673 K.

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