fig2

Figure 2. Electrical properties of innovative materials for high-performance flexible MO TFTs. (A) Transfer curve of ITZO TFT without the passivation under negative gate bias stress for 1 h (V_G = Vth - 20 V). Transfer curve and linear mobility of ITZO TFT with passivation by 5-nm GaO_x and ZSO. Reproduced with permission^[115], Copyright 2022, AIP Publishing; (B) Schematic of fabricated flexible IWO TFTs on PI substrate and transfer characteristics IWO TFTs on SiO₂ Reproduced with permission^[111], Copyright 2018, American Chemical Society; (C) Transfer characteristics of LT- and TPC-treated ZnON TFTs and saturation mobility depending on gate voltage sweep, Transfer curve of the ZnON TFTs on PEN substrate before and after delamination. Reproduced with permission^[119], Copyright 2018, American Chemical Society. MO: Metal oxide; TFTs: thin-film transistors; ITZO: indium tin zinc oxide; ZSO: zinc silicon oxide; IWO: indium tungsten oxide; PI: polyimide; LT: low temperature; TPC: thermal-photochemical; PEN: polyethylene naphthalate.