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Figure 4. Two-terminal memristive devices and their implementation of LIF model. (A) Representative current-voltage (I-V) characteristics of volatile (top) and nonvolatile (bottom) memory devices; (B) Stacked 5 × 5 crossbar array utilizing memristive devices. The output current varies depending on the state of the memristor; (C) Schematic diagram of the nanowire-based memristor system used to implement the random network; (D) Circuit diagram of the VO₂ memristor-based ALIF neuron; (E) Impact of V_g on the operational mechanism and spike frequency of ALIF neurons; (F) Schematic representation of a vertically stacked LIF device incorporating an analog resistive switching unit (Au/WO₃/W)-Threshold switching unit (W/Ag/Pt); (G) IF processes measured in the resistive component. (D and E) Reproduced with permission Copyright 2023, Nature Communications^[70]. (F and G) Reproduced with permission Copyright 2022, IEEE Electron Device Letters^[81]. LIF: Leaky integrate and fire; ALIF: adaptive LIF; IF: integrate and fire.