fig5

MELRSNet for accelerating the exploration of novel ultrawide bandgap semiconductors

Figure 5. Electronic and optical properties of selected UWBG semiconductors. A, Band edges of eight selected ultrawide bandgap semiconductors. Corresponding bandgaps are labeled. HSE06 calculated band structures of B, AlPO4, and C, HfSnO4. PDOS of D, AlPO4 and E, HfSnO4. F, UV-Vis spectrums of selected ultrawide bandgap semiconductors. UWBG: Ultrawide bandgap; HSE: Heyd-Scuseria-Ernzerhof; PDOS: partial density of states.

Microstructures
ISSN 2770-2995 (Online)

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Portico

All published articles are preserved here permanently:

https://www.portico.org/publishers/oae/