fig5
Figure 5. Atomic-scale STEM and EELS analysis of the (NNO/PTO)3 thin films. (A) Cross-sectional HAADF-STEM image of the (NNO/PTO)3 film. (B) IP strain εxx and (C) OOP strain εyy mappings from the corresponding HAADF-STEM image shown in (A) using GPA. Bar = 10 nm. (D) EELS Ti-L and O-K edges of the scanning range from the inside to the interface in the PTO.
