fig5

Figure 5. (A) The steps of the pressure processing method. (B) Top-view SEM images of the perovskite film via the pressure processing method and a reference sample using the spin-coating method. (C) Photograph of a module. (A-C) is quoted with permission from Chen et al.^[97]. (D) The schematic diagram of the PiP process introduced FAS oligomer barrier to resist moisture. (E) The top-view SEM images of pristine and PiP 150 °C films. (F) J-V curves of pristine and PiP 150 °C films. (G) Pictures of fresh and aged pristine and PiP 150 °C films. (D-G) is quoted with permission from Huang et al.^[96]. (H) AFM topographic images, (I) surface profile of the precursor film and the TPR film. (J) KPFM image of Au electrode based on control film and TPR film. (H-J) is quoted with permission from Yu et al.^[98]. (K) Cross-sectional SEM images of control and TP(200) films. (L) PL spectra of the TP(200) film under different excitations. (M) J-V curves for control- and TP-based devices. (K-M) is quoted with permission from Zhu et al.^[100]. (N) Schematic illustration of the lamination process. (O) J-V curves in reverse and forward scans for champion devices with different configurations. (N and O) is quoted with permission from Yadavalli et al.^[103].