fig3

Figure 3. (A) Cycling stability of Bare-Zn, Ni@Zn and Ni-0.1W@Zn in symmetrical cells at 1 mA cm^-2; (B) enlarged voltage profiles of Ni@Zn and Ni-0.1W@Zn at 1 mA cm^-2; (C) Cycling stability of Bare-Zn, Ni@Zn and Ni-0.1W@Zn in symmetrical cells at 2 mA cm^-2; (D) enlarged voltage profiles of Ni@Zn and Ni-0.1W@Zn at 2 mA cm^-2; (E) The first curves of Cu||Zn cell, Cu||Ni@Zn and Cu||Ni-0.1W@Zn cell at 1 mA cm^-2 for 0.5 mAh cm^-2; (F) Coulombic efficiency of Zn plating/stripping in Bare-Zn, Ni@Zn and Ni-0.1W@Zn cells with a current density of 1 mA cm^-2 capacity of 1 mAh cm^-2 (G) XRD patterns of Bare-Zn, Ni@Zn and Ni-0.1W@Zn after 200 h cycles at 1 mA cm^-2; Schematic illustrations of (H) Bare-Zn and (F) Ni-0.1W@Zn during plating/stripping.