fig2

Figure 2. Characterization of dislocation arrays in PLZS. (A-C) The two-beam dark-field micrographs of the identical area using an operating vector of g = [$$ 10\bar{1} $$], [020] and [121], respectively; (D) the selected-area electron diffraction pattern; (E) the corresponding bright-field micrograph; (F) the schematic drawing of dislocation arrays. The blue and yellow arrows in (E) indicate the directions of dislocation lines and array layout, respectively. The orange arrow and blue lines in (F) denote the electron-beam direction and dislocations. PLZS: (Pb_0.97La_0.02)(Zr_0.50Sn_0.50)O₃.