fig3

High-throughput screening of superlattice-like Ge-Sb-M (M = Sn, Se) thin films for multi-level phase change photonics materials

Figure 3. Phase distribution map of Ge-Sb-Se SLL thin films. (A) GSSe-1 after annealed at 423 K for 1 h; (B) GSSe-1 after annealed at 573 K for 1 h; (C) GSSe-2 after annealed at 423 K for 1 h; (D) GSSe-2 after annealed at 573 K for 1 h.

Microstructures
ISSN 2770-2995 (Online)

Portico

All published articles are preserved here permanently:

https://www.portico.org/publishers/oae/

Portico

All published articles are preserved here permanently:

https://www.portico.org/publishers/oae/