fig5

Roadmap for ferroelectric domain wall memory

Figure 5. (A) Schematic illustration of the polarization reversal within an LN memory cell. Arrows show domain orientations. (B) AFM topographic mapping of an in-plane LN mesa-like cell in sizes of w × l × h = 200 × 200 × 60 nm3 (upper panel). The intradomain between L and R can be switched into an opposite direction after the application of a poling voltage of 5 V, as inferred from in-plane PFM phase imaging in the lower panel. Scalar bars, 200 nm. Reprinted with permission[62]. Copyright 2022, AIP Publishing. (C) Sectional view of a three-dimensional stack of domain wall memories. (D) Bird’s-eye view of a three-dimensional stack of domain wall memories.

Microstructures
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