fig5
Figure 5. (A) Schematic illustration of the polarization reversal within an LN memory cell. Arrows show domain orientations. (B) AFM topographic mapping of an in-plane LN mesa-like cell in sizes of w × l × h = 200 × 200 × 60 nm3 (upper panel). The intradomain between L and R can be switched into an opposite direction after the application of a poling voltage of 5 V, as inferred from in-plane PFM phase imaging in the lower panel. Scalar bars, 200 nm. Reprinted with permission[62]. Copyright 2022, AIP Publishing. (C) Sectional view of a three-dimensional stack of domain wall memories. (D) Bird’s-eye view of a three-dimensional stack of domain wall memories.
