fig6
![Grain engineering of high energy density BaTiO<sub>3</sub> thick films integrated on Si](https://image.oaes.cc/b3d5c082-04cc-4488-9d09-24187ce5691e/5818.fig.6.jpg)
Figure 6. (A) Typical polarization-electric field (P-E) hysteresis loops of the four unbuffered BaTiO3 films directly deposited on Pt/Ti/Si, with thicknesses ranging between 435 nm and 2610 nm; (B) The relative dielectric permittivity and loss tangents as functions of the applied voltage for the four films in (A).