fig5
![Grain engineering of high energy density BaTiO<sub>3</sub> thick films integrated on Si](https://image.oaes.cc/b3d5c082-04cc-4488-9d09-24187ce5691e/5818.fig.5.jpg)
Figure 5. (A) Typical polarization-electric field hysteresis loops of the LaNiO3 buffered BaTiO3 film (~510 nm) and (B) the corresponding energy storage density Wrec and relative dielectric permittivityof the film in (A), as well as those of a BaTiO3 ceramic, plotted as functions of the applied electric field.