fig7

Figure 7. (A) Typical characterization results of single crystalline GaN nanowires and measured Young’s modulus E versus characteristic diameter d of total 14 GaN nanowires. Reproduced with permission^[79]. Copyright 2014, ACS publications. (B) Left: High-resolution TEM (HRTEM) images of GaAs nanowires with hexagonal wurtzite (WZ) and WZ with a high density of stacking faults (WZ-SF) structure, respectively. Right: Measured corresponding effective Young’s modulus of WZ (black diamond) and WZ-SF (red circle). Reproduced with permission^[80]. Copyright 2016, ACS publications.