fig7
From: Tunable type-I band alignment and electronic structure of GaSe/MoSi2N4 van der Waals heterostructure
Figure 7. (A) Variation of GaSe/MoSi2N4 vdWH bandgap with in-plane strain. The illustration is a schematic model of the applied in-plane strain; (B) Projected band structure of GaSe/MoSi2N4 vdWHs under in-plane strain of ε = -6%, -4%, -2%, +2%, +4%, +6%. vdWHs: van der Waals heterostructures; GaSe: Gallium selenide.
