fig6
From: Tunable type-I band alignment and electronic structure of GaSe/MoSi2N4 van der Waals heterostructure
Figure 6. (A) GaSe/MoSi2N4 vdWH bandgap variation with interlayer distance. The illustration is a schematic model of applying strain in the z-direction; (B) GaSe/MoSi2N4 vdWH band structure at different interlayer distances. vdWHs: van der Waals heterostructures; GaSe: Gallium selenide.
