fig4
From: Tunable type-I band alignment and electronic structure of GaSe/MoSi2N4 van der Waals heterostructure
Figure 4. (A) In-plane average charge density difference of GaSe/MoSi2N4 vdWHs; (B and C) in-plane average electrostatic potential of GaSe/MoSi2N4 vdWHs. Inset represents the 3D charge density difference in the heterostructure. The yellow and cyan regions represent charge accumulation and depletion, respectively. vdWHs: van der Waals heterostructures; GaSe: Gallium selenide.
