fig9

Figure 9. Electrical characterization of fullerene-peapods FETs: (A) Transfer curves for a pristine (unfilled) SWCNT FET and a C₇₀ nanopeapods FET device (Reproduced with permission^[26]. Copyright 2010, American Chemical Society). (B) Transfer curves measured for C₆₉N nanopeapods FET (Reproduced with permission^[26]. Copyright 2010, American Chemical Society). (C) I_DS-V_G characteristics measured at room temperature for an n-type semiconducting C₅₉N@SWCNT and a metallic C₅₉N@SWCNT without light (V_DS = 0.1 V). The inset shows the I_DS characteristic of the semiconducting C₅₉N@SWCNT, which is measured as a function of time without and with incident light (400 nm wavelength) (Reproduced with permission^[140]. Copyright 2009, American Chemical Society). (D) Transfer characteristics of C₇₈, C₉₀, and Dy@C₈₂-peapods (V_DS = 20 mV, T = 23 K) (Reproduced with permission^[63]. Copyright 2003, Elsevier). (E) V_G dependence of conductance measured at various temperatures (V_DS = 4) (Reproduced with permission^[23]. Copyright 2001, AIP Publishing). (F) Conductance of Dy@C₈₂-peapods at temperatures from 4 to 215 K. The insets in (E) and (F) are band diagrams (Reproduced with permission^[23]. Copyright 2001, AIP Publishing).