fig5
![The influence of A/B-sites doping on antiferroelectricity of PZO energy storage films](https://image.oaes.cc/425ec1d2-2359-44f0-b5b1-2f0f60ec8d3d/5313.fig.5.jpg)
Figure 5. (A) The P-E loops of PZO-based films at 800 kV/cm, and corresponding (C) the polarization difference value of Δ P (Pmax - Pr). (B) The I-E loops of PZO-based films at 800 kV/cm, and corresponding (D) the switching field value of Δ E (EF - EA). PZO: PbZrO3.