fig2
![The influence of A/B-sites doping on antiferroelectricity of PZO energy storage films](https://image.oaes.cc/425ec1d2-2359-44f0-b5b1-2f0f60ec8d3d/5313.fig.2.jpg)
Figure 2. (A) The GIXRD patterns of PZO-based films at 2θ range from 20° to 60°. (B) The enlarged patterns at 2θ =30°-31°.
Figure 2. (A) The GIXRD patterns of PZO-based films at 2θ range from 20° to 60°. (B) The enlarged patterns at 2θ =30°-31°.
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