fig7
Figure 7. (A) Phase diagram and physical properties of TiSe2 under electron doping[42]. (B) Atomic-resolution STEM image and (C) intensity line profile of exfoliated VSe2 flake and (D) layer-dependent Raman spectra (inset: mapping) of VSe2 from monolayer to bulk[143]. (E) Metal-insulator phase transition schematic of VSe2[149]. (F) Magnetoresistance of VSe2 nanosheets with different thicknesses, showing WAL effect features by HLN fitting[19].
