fig7
![Microstructural evolution and ferroelectricity in HfO<sub>2 </sub>films](https://image.oaes.cc/acb286e2-3aef-4c4b-b87e-31f17f58d8a1/4637.fig.7.jpg)
Figure 7. (A) Switchable polarization PSW of HfO2 films as a function of doping concentration for different dopants: Sc, Y, Si, Ge, Zr and N. (B) O-, T- and C-phase fraction of HfO2 films as a function of doping concentrations for various dopants. (C) PSW as a function of the M-phase fraction for HfO2 films with various dopants. (D) O-, T- and C-phase (111) peak positions as a function of the fraction of the M-phase for various dopants. The red and green arrows represent theoretical values for FE O-phase and non-FE T-phase, respectively[114]. PSW: switchable polarization; FE: ferroelectric.