fig10
![Microstructural evolution and ferroelectricity in HfO<sub>2 </sub>films](https://image.oaes.cc/acb286e2-3aef-4c4b-b87e-31f17f58d8a1/4637.fig.10.jpg)
Figure 10. (A) P-E hysteresis of HZO thin films deposited on SiO2, Si and CaF2 substrates. (B) Relationship between remanent polarization and deviation of the lattice spacing[117]. HZO: Hf0.5Zr0.5O2.
Figure 10. (A) P-E hysteresis of HZO thin films deposited on SiO2, Si and CaF2 substrates. (B) Relationship between remanent polarization and deviation of the lattice spacing[117]. HZO: Hf0.5Zr0.5O2.
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