fig2

Figure 2. Comparisons of polarization change and electric breakdown strength of thin film energy storage materials, including Fe-doped (Na_0.5Bi_0.5)TiO₃^[23], Bi_3.25La_0.75Ti₃O₁₂^[24], (Pb_0.92La_0.08)(Zr_0.52Ti_0.48)O₃^[25], 0.94(Bi_0.5,Na_0.5)TiO₃-0.06BaTiO₃^[9], Mn-doped 0.4BiFeO₃-0.6SrTiO₃^[26], BiFeO₃-BaTiO₃-SrTiO₃^[27], Sm-doped 0.3BiFeO₃-0.7BaTiO₃^[28], La-doped PbZrO₃^[29], (Pb_0.97La_0.02)(Zr_0.98Ti_0.02)O₃^[30],(Pb_0.97La_0.02)(Zr_0.66Sn_0.23Ti_0.11)O₃^[31], Si-doped HfO₂^[32], Pb_0.5Sr_0.5HfO₃^[33], 0.8Pb(Zr_0.925Hf_0.075)O₃-0.2LaScO₃^[34], Ba(Zr_0.2Ti_0.8)O₃^[35].