fig6

Figure 6. Doping process for the high electrical performance of MO TFTs. (A) Transfer properties of the non-passivated optimized IGZTO TFTs and SiO₂-passivated optimized IGZTO TFTs at PDA 400 °C. Reproduced with permission^[59]. Copyright 2022, American Chemical Society; (B) Transfer characteristics of In₂O₃:F TFTs. Reproduced with permission^[173]. Copyright 2024, Wiley-VCH; (C) Transfer characteristics of AOS TFTs, IGZO NBIS testing results and IGZO:N NBIS testing results. The stress conditions are V_GS = -20 V, UV light wavelength = 380 nm and UV light power = 0.1 mW/cm². Reproduced with permission^[159]. Copyright 2016, Elsevier; (D) Gibbs Energy of oxidation calculated for metals and transfer characteristics of ISZO TFTs with different doped metal ratios. Reproduced with permission^[60]. Copyright 2013, American Chemical Society. MO: Metal oxide; TFTs: thin-film transistors; IGZTO: indium gallium zinc tin oxide; PDA: post-deposition annealing; ALD: atomic layer deposition; AOS: amorphous oxide semiconductor; IGZO: indium gallium zinc oxide; NBIS: negative bias illumination stress; UV: ultraviolet; ISZO: indium strontium zinc oxide.