fig4

Figure 4. (A) Transfer characteristics of CuI-based TFT with various concentrations of Zn dopants^[80]. Copyright 2020 The Authors. Published by Springer Nature; (B) Transfer characteristics of CuI-based TFT with various dopants (Ga³⁺, Zn²⁺, Ni²⁺, Bi³⁺, Pb²⁺, and Sn⁴⁺) at optimized concentrations^[80]. Copyright 2020 The Authors. Published by Springer Nature; (C) Transfer curves of printed CuBr_xI_1-x (x = 0, 0.2, 0.4, 0.6, and 0.8)-based TFTs^[81]. Copyright 2022 The Royal Society of Chemistry; (D) Atomic force microscopy images of CuI surfaces on SiO₂/Si substrates (top layer) and CS films (bottom layer)^[84]. Copyright 2022 Elsevier B.V.; (E) Schematics of the lattice structure of air-annealed and vacuum-annealed CuI^[40]. Copyright 2022 American Chemical Society. CuI: Copper iodide; TFT: thin-film transistor.