fig2

Transparent <i>p</i>-type copper iodide for next-generation electronics: fundamental physics and recent research trends

Figure 2. (A) Atomic orbital energy levels within the bandgap of copper halides and a diagram illustrating the interaction between Cu 4s orbitals and halide s orbitals in the conduction band, as well as Cu 3d orbitals and halide p orbitals[52]. Copyright 2024 Elsevier B.V.; (B) Formation energy of intrinsic defects in CuI[54]. Copyright 2024 AIP Publishing LLC; (C) Relationship between mobility and carrier concentration of CuI, based on experimental and computational data[14]. Copyright 2023 The Authors. Published by American Chemical Society.

Soft Science
ISSN 2769-5441 (Online)
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