fig5

Figure 5. TEM images (scale bar: 20 nm) of InP-ZnBr₂-Zn(OA)₂/ZnSe/ZnS QDs having (A) thin- and (B) thick-ZnSe; (C) Absorption spectra; (D) time-resolved PL decay profiles; (E) variations of FWHM and PL QY of InP-ZnBr₂-Zn(OA)₂/ZnSe/ZnS QDs as a function of ZnSe shell thickness; (F) ZnSe shell thickness-dependent change of heterostructural strain of InP core and ZnSe shell of InP-ZnBr₂-Zn(OA)₂/ZnSe QDs. TEM: Transmission electron microscopy; InP: indium phosphide; QDs: quantum dots; PL: photoluminescence; FWHM: full-width-at-half-maximum; QY: quantum yield.