fig7

Figure 7. Schematic diagram of a neuromorphic system based on OECTs. (A) Schematic diagram illustrating the working mechanism of an electrolyte gate transistor; (B) Circuit diagram of an OAN, comprising two p-type OECTs (T₁, T₂) including an RC element; (C) Transfer curves of T₁ (depletion mode) and T₂ (enhancement mode) measured in the drain voltage range of 0.1 to 0.4 V; (D) Schematic illustration of the stretchable neuromorphic transistor; (E) Postsynaptic current of the device measured under tensile strain ranging from 0% to 50%; (F) Dataset of 270 hand shapes collected from a total of three individuals; (G) Tensile rate and postsynaptic current for hand gesture samples classified into three distinct motions. (B and C) Reproduced with permission Copyright 2022, Nature Electronics^[96]. (D-G) Reproduced with permission Copyright 2022, ACS Nano^[101]. OECTs: Organic electrochemical transistors; OAN: organic artificial neuron; RC: resistor-capacitor.