fig2

Figure 2. Performance of the fully soft Schottky diode. (A) Energy band diagram of PEDOT:PSS, P3HT, and EGaIn; (B) Energy band diagram upon applied electrical bias; (C) Representative J-V characteristics of the fully soft Schottky diode; (D) An optical image of the diodes array (inset: a magnified optical image of the single device); (E) Calculated RR mapping of the 5 × 5 diodes array; (F and G) The statistical distribution of RR (F) and J_f (G) of the array; (H) J-V characteristics of the fully soft Schottky diode under the various mechanical strains of 0%, 10%, 20%, 30%, and 0% (released); (I and J) Calculated RR (I) and J_f (J) of the fully soft Schottky diode under the mechanical strains of 0%, 10%, 20%, 30%, and 0%(released); (K and L) Calculated RR (K) and J_f (L) of the fully soft Schottky diode under the repetitive strain cycles at the mechanical strains of 30%. PEDOT:PSS: Poly(3,4-ethylenedioxythiophene) polystyrene sulfonate; P3HT: poly(3-hexylthiophene); EGaIn: gallium-indium eutectic; P3HT-NFs: poly(3-hexylthiophene) nanofibrils; PDMS: polydimethylsiloxane; UV-O₃: ultraviolet-ozone; SEBS: styrene-ethylene-butylene-styrene; RR: rectification ratio; J-V: current density-voltage; J_f: forward current density.