fig3
From: Stretchable synaptic transistors based on the field effect for flexible neuromorphic electronics
![Stretchable synaptic transistors based on the field effect for flexible neuromorphic electronics](https://image.oaes.cc/5032b37e-4933-4db5-bc6a-95002c787884/5626.fig.3.jpg)
Figure 3. (A) Schematic diagram of the buckled MoS2 FET on a stretchable PDMS substrate; (B) Transfer curves, mobility, and SS value of the device under biaxial strain with different strains, Vds = 3 V; (C) Optical potentiation (1 Hz, 0.5 s) and electric depression (Vg =