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![Stretchable synaptic transistors based on the field effect for flexible neuromorphic electronics](https://image.oaes.cc/5032b37e-4933-4db5-bc6a-95002c787884/5626.fig.2.jpg)
Figure 2. (A) Structure of the OECT with a membrane on a 3D mogul-patterned PDMS substrate and FESEM images of the 3D mogul-patterned substrate before (top) and after (bottom) stretching for 1,000 cycles at 30% strain, respectively; (B) Optical image of the OECT without membrane in the direction of the channel length at 0% (left) and 30% (right) strains; (C) Transfer characteristics and current change (IDS/IDS,0) of the OECT obtained under uniaxial static stretching from 0% to 30%; (D) IDS value after 10 s upon removal of gate pulsing and SW values generated in the OECT with the membrane after different gate pulses number before and after cyclic stretching of 1,000 cycles at 30% strain. Reprinted with permission from Ref.[13]. Copyright 2021, John Wiley and Sons. OECT: organic electrochemical transistor; PDMS: polydimethylsiloxane.