fig4
From: Direct fabrication of high-performance multi-response e-skin based on a graphene nanosheet film
Figure 4. Photoelectric response of F-GNEC film sensor. (A) Schematic diagram of photodetection of F-GNEC film-based e-skin. Photocurrent-voltage (Iph-Vsd) curves of F-GNEC film-based e-skin at bias from -5 to 5 V under (B) a 532 nm laser and (C) a 785 nm laser with a laser power change from 0.1 to 50 mW. (D) Multicycle of laser ON/OFF of F-GNEC film-based e-skin under the 532 nm laser with frequencies of 0.1 and 0.05 Hz. (E) A single photoresponse under a 0.1 Hz laser exhibiting a response time of 802 ms and a recovery time of 2043 ms.
