fig11

Design of high energy storage ferroelectric materials by phase-field simulations

Figure 11. Strain engineering regulates domain structure and energy storage performance. (A) 0.1BFO-0.45BTO-0.45STO thin film domain structure with different strains by substrate. This figure is quoted with the permission from Xu et al.[120], copyright 2022, John Wiley and Sons; (B) P-E loops and polarization distribution of BTO freestanding thin film under different bending strains; (C) Polarization distribution under different bending strains[121]. BFO: BiFeO3; BTO: BaTiO3; STO: SrTiO3.

Journal of Materials Informatics
ISSN 2770-372X (Online)
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