fig4

Figure 4. Effect of acceptor defect formation on electronic properties of gapped metals. (A) Schematic illustration of the electronic structure of n-type gapped metal for pristine and acceptor defect systems (where $$ \mathrm{E}_{\mathrm{bg}}^{\mathrm{int}} $$ is the internal band gap, E_pcbm is the principal conduction band minimum, E_F is the Fermi level and ∆E_CB is the occupied conduction band width defined as E_F - E_pcbm); (B) ∆E_CBvs. supercell size in Ca₆Al₇O₁₆:V_Al system containing single Al vacancy (hollow square is when all electrons are completely removed from principal conduction band). DOS: Density of states.