fig6
![Prediction of the atomic structure and thermoelectric performance for semiconducting Ge<sub>1</sub>Sb<sub>6</sub>Te<sub>10</sub> from DFT calculations](https://image.oaes.cc/a8035d95-0edb-4077-af43-6cceb5fc729d/4285.fig.6.jpg)
Figure 6. Electronic transport properties of (A-D) GST-I and (E-H) GST-II as a function of carrier concentration for p- and n-type dopings at different temperatures: (A, E) Seebeck coefficient S; (B, F) electrical conductivity σ; (C, G) electronic thermal conductivity κe; and (D, H) power factor PF.