fig1
![Prediction of the atomic structure and thermoelectric performance for semiconducting Ge<sub>1</sub>Sb<sub>6</sub>Te<sub>10</sub> from DFT calculations](https://image.oaes.cc/a8035d95-0edb-4077-af43-6cceb5fc729d/4285.fig.1.jpg)
Figure 1. Calculated total energy for the seven atomic stackings of Ge1Sb6Te10. The inset corresponds to the basic stacking units with 17 atomic layers of each configuration.
Figure 1. Calculated total energy for the seven atomic stackings of Ge1Sb6Te10. The inset corresponds to the basic stacking units with 17 atomic layers of each configuration.
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