fig5

Strain engineering of two-dimensional materials for energy storage and conversion applications

Figure 5. Vertical lattice mismatch-induced strain for 2D materials. (A) Experimental schematic diagram of TERS for Raman shift detection; (B) Spectral of 1D TERS measurements; (C) Tip-enhanced Raman spectroscopy was performed at the colored spots marked in the inset STM image; (A-C): quoted with permission from Li et al.[41]; (D) STM image of a transverse heterojunction of WSe2-MoS2; (E) An instance of the moiré pattern observed in a strain-free MoS2/WSe2 bilayer stack; (F) A close-up image of the moiré pattern in (D) shows spatially varying strains; (D-F): quoted with permission from Zhang et al.[79]; (G) Schematic diagram of the 2D multilayered VOPO4-graphene heterostructure; (H-I) Distribution from 100 individual scans of VOPO4-graphene heterostructures, showing the Raman shift of O-P-O and V=O (color orange indicates VOPO4 nanoflakes, color green indicates VOPO4-graphene, color blue indicates VOPO4·2H2O); (G-I): quoted with permission from Xiong et al.[80]. STM: Scanning tunneling microscopy; TERS: tip-enhanced Raman spectroscopy; 2D: two-dimensional.

Chemical Synthesis
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