fig3

Figure 3. (A) The schematic diagram of the NIR response measurement. (B) EQE and (C) D* of the photodetectors. The photocurrent response curves of photodetectors based on (D) the as-pressed wafer, (E) the P-FAPbI₃ wafer, and (F) the P&C-FAPbI₃ wafer under an 854 nm light source, respectively. The corresponding rise time from the enlarged photocurrent response curve of (D-F) wafers photodetectors is shown in the below part of (G-I).