fig2

Scalable fabrication of inch-sized FAPbI<sub>3</sub> perovskite wafers for highly sensitive near-infrared photodetection

Figure 2. (A) The schematic illustration of the chemical interaction mechanism of PANI with the perovskite. (B) FTIR spectroscopy of PANI, as-pressed wafer, and P&C-FAPbI3 wafer. (C) I 3d XPS spectra of the as-pressed wafer, and P&C-FAPbI3 wafer. (D) UV-Vis absorption spectra of solution-processed film and wafers. (E) Tauc plot spectra of solution-processed perovskite film, as-pressed wafer, P-FAPbI3 wafer, and the P&C-FAPbI3 wafer. (F) SSPL and (G) TRPL spectra of the as-pressed wafer, P-FAPbI3 wafer, and P&C-FAPbI3 wafer with an excitation wavelength of 475 nm. (H) Dark I-V curves of the three wafers-based photodetectors. (I) Dark I-V curves of the hole transporting-only devices.

Energy Materials
ISSN 2770-5900 (Online)
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