fig2

Figure 2. N_ovs. time of Cs_0.2FA_0.8PbI₃ films after exposure to heat at 45 and 65 °C with black scatter points representing exposure to 45 °C and blue scatter points representing exposure to 65 °C respectively. An initial increase in N_o is observed due to vacancy activation with exposure to heat and an eventual decrease in N_o due to degradation of Cs_0.2FA_0.8PbI₃ films with exposure to heat for the temperatures 45 and 65 °C, respectively. Inset - Device stack structure of Cs_0.2FA_0.8PbI₃ films in the form of ITO-Glass/MHP/solvent-C, with the arrows representing the contact points for probes and the signs representing polarity of the bias (forward bias).