fig7

Figure 7. (A) The schematic illustration outlines the fabrication process of the ZnIn₂S₄/CdS/ZnO photoanode; (B) SEM images offer a close-up view of the ZnIn₂S₄/CdS/ZnO photoanode, revealing the surface morphology; (C) Cross-sectional SEM images provide insight into the layered structure of the ZnIn₂S₄/CdS/ZnO photoanode; (D) The diagram compares the charge transfer mechanisms in the traditional Type-II and Z-scheme configurations within the ZnIn₂S₄/CdS heterojunction during a (5,5-Dimethyl-1-pyrroline N-oxide) DMPO trapping experiment; (E) Schematic illustrates charge carrier migration in the Z-scheme ZnIn₂S₄/CdS heterojunction, highlighting the influence of the internal electric field; (F) LSV curves demonstrate the enhanced performance of the ZnIn₂S₄/CdS/ZnO photoanode under varying conditions^[93]. Copyright 2021, Wiley-VCH. LSV: Linear sweep voltammetry; SEM: scanning electron microscope.