fig4
Figure 4. (A) Electrical resistivities of the SiOx/G/C and other two samples; (B) CV data of the SiOx/G/C at changing scan rates; (C) Fitted lines and corresponding b-value resulted from the value of log(i, peak current) vs. log(v, scan rate) for SiOx/G/C electrode; (D) Contribution of capacitive charge storage to the total capacity of SiOx/G/C at a higher scan rate (1.0 mV·s-1); (E) Two kinds of charge storage distribution ratios with the same scan rates; (F) The relationships of Z’ and ω-1/2 for the SiOx/G/C and the other two control groups. CV: Cyclic voltammetry.
