fig5
![Predicting a novel two-dimensional BN material with a wide band gap](https://image.oaes.cc/86c05557-fbc8-4b3f-8a85-6483faf29475/4946.fig.5.jpg)
Figure 5. (A) Electronic band structure and PDOS of Pmma BN. (B) Band-decomposed charge densities at the VBM and CBM. The isosurface value is 0.025 eV/Å3. (C) Orientation-dependent carrier effective mass. The angle refers to the x direction.
Figure 5. (A) Electronic band structure and PDOS of Pmma BN. (B) Band-decomposed charge densities at the VBM and CBM. The isosurface value is 0.025 eV/Å3. (C) Orientation-dependent carrier effective mass. The angle refers to the x direction.
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