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Figure 8. (A) Schematic representation of Si-Cu3Si-CNT/G-C synthesis. (B) Cycling behavior of graphite, bulk Si and Si-Cu3SiCNT/G-C. (C) Rate capabilities of graphite and Si-Cu3Si-CNT/G-C. (D) ICE and capacity retention for bulk Si, Si-Cu3Si, Si-Cu3Si-CNT/G and Si-Cu3Si-CNT/G-C electrodes. (E) Voltage profiles from 1st to 100th cycle for Si-Cu3Si-CNT/G-C. (F) Changes to the thickness of bulk Si, Si-Cu3Si, Si-Cu3Si-CNT/G and Si-Cu3Si-CNT/G-C electrodes according to the SOC. Reproduced with permission from Ref.[143] (Copyright 2020, Chemical Engineering, Elsevier). CNT: Carbon nanotube; HEBM: heat treatment and ball milling; SOC: state of charge.